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BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 03 — 3 March 2009
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Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) 15.5 ηD (%) 45 tr (ns) 20 tf (ns) 10
3.1 to 3.5 32
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.
BLS6G3135-20 Datasheet
