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BLM6G10-30G - W-CDMA 900 MHz - 1000 MHz power MMIC

Download the BLM6G10-30G datasheet PDF. This datasheet also covers the BLM6G10-30 variant, as both devices belong to the same w-cdma 900 mhz - 1000 mhz power mmic family and are provided as variant models within a single manufacturer datasheet.

Description

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 920 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Th = 25 °C.

Features

  • I Typical 2-carrier W-CDMA performance at a frequency of 940 MHz: N Average output power = 2 W N Gain = 29 dB (typ) N Efficiency = 11.5 % N IMD3 =.
  • 48.5 dBc N ACPR =.
  • 52 dBc I Integrated temperature compensated bias I Excellent thermal stability I Biasing of individual stages is externally accessible I Integrated ESD protection I Small component size, very suitable for PA size reduction I On-chip matching (input matched to 50 ohm, output partially matched) I High power gain I Desi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLM6G10-30_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLM6G10-30G
Manufacturer NXP Semiconductors
File Size 109.37 KB
Description W-CDMA 900 MHz - 1000 MHz power MMIC
Datasheet download datasheet BLM6G10-30G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC Rev. 01 — 28 August 2009 www.DataSheet4U.com Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 920 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1) Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f (MHz) f1 = 935; f2 = 945 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 29 ηD (%) 11.5 IMD3 (dBc) −48.5[1] ACPR (dBc) −52[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
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