Datasheet4U Logo Datasheet4U.com

BGU2003 - SiGe MMIC amplifier

Description

Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.

Features

  • Low current.
  • Very high power gain.
  • Low noise figure.
  • Integrated temperature compensated biasing.
  • Control pin for adjustment bias current.
  • Supply and RF output pin combined.

📥 Download Datasheet

Datasheet Details

Part number BGU2003
Manufacturer NXP Semiconductors
File Size 99.76 KB
Description SiGe MMIC amplifier
Datasheet download datasheet BGU2003 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BGU6101 Wideband silicon low-noise amplifier MMIC NXP
BGU6102 Wideband silicon low-noise amplifier MMIC NXP
BGU6104 Wideband silicon low-noise amplifier MMIC NXP
BGU7003 Wideband Silicon Germanium Low-noise Amplifier MMIC NXP
BGU7041 1 GHz wideband low-noise amplifier NXP

Other Datasheets by NXP Semiconductors

Part Number Description
BGU7004 SiGe:C Low Noise Amplifier MMIC
BGU7005 Low Noise Amplifier MMIC
BGU7007 Low Noise Amplifier MMIC
BGU7008 SiGe:C Low Noise Amplifier MMIC
BGU7031 1 GHz wideband low-noise amplifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGU2003 SiGe MMIC amplifier Preliminary specification 2002 May 17 www.DataSheet4U.com Philips Semiconductors Preliminary specification SiGe MMIC amplifier FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Control pin for adjustment bias current • Supply and RF output pin combined. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) • Low noise amplifiers • Satellite television tuners (SATV) • High frequency oscillators.
Published: |