Datasheet4U Logo Datasheet4U.com

NTE88 - Silicon Complementary Transistors

Download the NTE88 datasheet PDF. This datasheet also covers the NTE87 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

to

Features

  • D High Safe Operating Area: 1.2A @ 100V D Completely Characterized for Linear Operation D High DC Current Gain: hFE = 20 Min @ IC = 2A D Low Saturation Voltage: 2V D For Low Distortion Complementry Designs Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO(sus).
  • . . . . 250V Collector.
  • Emitter Voltage, VCEX.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE87_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE88
Manufacturer NTE Electronics (defunct)
File Size 23.81 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE88 Datasheet

Full PDF Text Transcription

Click to expand full text
NTE87 (NPN) & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC–to–DC converters or inverters. Features: D High Safe Operating Area: 1.2A @ 100V D Completely Characterized for Linear Operation D High DC Current Gain: hFE = 20 Min @ IC = 2A D Low Saturation Voltage: 2V D For Low Distortion Complementry Designs Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |