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NTE488 - Silicon NPN Transistor

Description

The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications.

Features

  • D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case.

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Datasheet Details

Part number NTE488
Manufacturer NTE Electronics (defunct)
File Size 21.94 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE488 Datasheet

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Full PDF Text Transcription

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NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case Application: 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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