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NTE389 - Silicon NPN Transistor

Description

The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits.

Features

  • D Collector.
  • Emitter Voltage: VCEX = 1500V D Glass Passivated Base.
  • Collector Junction D Forward Bias Safe Operating Area @ 50µs = 20A, 300V D Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 750V Collector.
  • Emitter Voltage, VCEX.

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Datasheet Details

Part number NTE389
Manufacturer NTE Electronics (defunct)
File Size 20.34 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE389 Datasheet

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Full PDF Text Transcription

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NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction D Forward Bias Safe Operating Area @ 50µs = 20A, 300V D Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . .
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