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NTE359 - Silicon NPN Transistor RF & Microwave Transistor

Description

RF Power Transistor 20W 175 MHz

Features

  • Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 35V Collector.
  • Base Voltage, VCB.
  • . 65V Emitter.

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Datasheet Details

Part number NTE359
Manufacturer NTE Electronics (defunct)
File Size 98.18 KB
Description Silicon NPN Transistor RF & Microwave Transistor
Datasheet download datasheet NTE359 Datasheet

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www.DataSheet4U.com NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter−Base Voltage, Veb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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