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NTE339 - Silicon NPN Transistor

Description

The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large

signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.

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Datasheet Details

Part number NTE339
Manufacturer NTE Electronics (defunct)
File Size 147.16 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE339 Datasheet

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Full PDF Text Transcription

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NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz. D Specified 12.5 Volt, 50MHz Characteristics Output Power = 40 Watts Minimum Gain = 7.5dB Efficiency = 50% Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V .........................................................
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