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NTE338 - Silicon NPN Transistor

Description

The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz.

Features

  • D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45% D Intermodulation Distortion @ 20W (PEP): IMD =.
  • 30dB Min D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 20V Collector.
  • Base Voltage, VCBO.

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Datasheet Details

Part number NTE338
Manufacturer NTE Electronics (defunct)
File Size 23.06 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE338 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
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Full PDF Text Transcription

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NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45% D Intermodulation Distortion @ 20W (PEP): IMD = –30dB Min D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . .
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