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NTE337 Silicon NPN Transistor RF Power Amp, Driver
Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large– signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz. Features: D Specified 12.5V, 50MHz Characteristics: Output Power = 8W Minimum Gain = 10dB Efficiency = 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . .