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NTE318 Silicon NPN Transistor RF Power Output
Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions. Features: D Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain D Withstands severe mismatch under operating conditions D Low inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE318 Datasheet
