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NTE317 Silicon NPN Transistor RF Power Output
Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions. Features: D 70W Minimum with Greater than 13.5dB Gain D Withstands Severe Mismatch under Operating Conditions D Emitter Ballasted D Low Inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter–Base Voltage, VEBO . . . . . . .
NTE317 Datasheet
