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NTE3098 Optoisolator Phototransistor w/NPN Transistor Output
Description: The NTE3098 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a single 4–Lead DIP type package. Features: D Collector–Emitter Voltage: VCEO = 55V Min D Current Transfer Ratio: IC/IF = 100% Min D Isolation Voltage: BVS = 5000Vrms Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) LED Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Derate above 39°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7mA/°C Pulse Forward Current (100µs Pulse, 100pps), IFP . . . . . . . . . . . . . . . . . . . . .