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NTE3045 - Optoisolator Silicon NPN Darlington Phototransistor

Description

The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6

Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios.

Features

  • D High Sensitivity to Low Input Drive Current D High Collector.
  • Emitter Breakdown Voltage: V(BR)CEO = 80V (Min) D High Input.
  • Output Isolation Guaranteed: VISO = 7500V (Peak) Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Input LED Reverse Voltage, VR.
  • 3V Continuous Forward Current, IF.

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Datasheet Details

Part number NTE3045
Manufacturer NTE Electronics (defunct)
File Size 22.10 KB
Description Optoisolator Silicon NPN Darlington Phototransistor
Datasheet download datasheet NTE3045 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE3040 Optoisolator NPN Transistor
NTE3041 Optoisolator NPN Transistor
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NTE3043 Optoisolator NPN Transistor
NTE3044 Optoisolator NPN Darlington Transistor

Full PDF Text Transcription

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NTE3045 Optoisolator Silicon NPN Darlington Phototransistor Output Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay drivers but provides excellent performance in interfacing and coupling systems, phase and feedback controls, solid state relays, and general purpose switching circuits.
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