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NTE2998 - P-Channel MOSFET

Features

  • D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G D S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain.
  • Source Voltage, VDSX.
  • . 200V Gate.
  • Source Voltage, VGSS.
  • . m14V Continuous Drain Current, ID.

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Datasheet Details

Part number NTE2998
Manufacturer NTE Electronics (defunct)
File Size 67.71 KB
Description P-Channel MOSFET
Datasheet download datasheet NTE2998 Datasheet

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Full PDF Text Transcription

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NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G D S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m14V Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . .
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