NTE2987 - N-Channel MOSFET

NTE Electronics (defunct)

Features

D Avalanche Rugged Technology D Logic Level Gate Drive D RDS(on) = 0.09 Typ. at VGS = 5V D +175C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability D G S Absolute Maximum Ratings: Drain CCuornretinntu, oIDus PulsTTeCCd==(N++o21t50e0C1C).

NTE2987 n-channel mosfet by NTE - Datasheet Preview

Datasheet Details

Part number	NTE2987
Manufacturer	NTE Electronics (defunct)
File Size	63.95 KB
Description	N-Channel MOSFET
Datasheet	NTE2987 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number	Description
NTE298	Silicon Complementary Transistors
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Full PDF Text Transcription

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NTE2987 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS(on) = 0.09 Typ. at VGS = 5V D +175C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability D G S Absolute Maximum Ratings: Drain CCuornretinntu, oIDus PulsTTeCCd==(N++o21t50e0C1C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Published: May 9, 2005 |