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NTE2974 MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Low On–State Resistance: RDS(on) = 1.1Ω Max (VGS = 10V, ID = 3A) D Low Input Capacitance: Ciss = 1150pF Typ D High Avalanche Capability Ratings D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–to–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate–to–Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current, ID DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6.0A Pulse (Note 1) . . . . . . . . . . .