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NTE2969 MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Low Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Low Static Drain–Source On–State Resistance Absolute Maximum Ratings: Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.1A Pulsed (Note 1) . . . . . . . . . . . . .
NTE2969 Datasheet
