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NTE2948 - N-Channel MOSFET

Features

  • D Low Drain.
  • Source ON Resistance: RDS(ON) = 4 (Typ) D High Forward Transfer Admittance: |yfs| = 0.6S (Typ) D Low Leakage Current: IDSS = 100A (Max) (VDS = 400V) D Enhancement Model: Vth = 2 to 4V (VDS = 10V, ID = 1mA).

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Datasheet Details

Part number NTE2948
Manufacturer NTE Electronics (defunct)
File Size 72.72 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2948 Datasheet

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Full PDF Text Transcription

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NTE2948 MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 4 (Typ) D High Forward Transfer Admittance: |yfs| = 0.6S (Typ) D Low Leakage Current: IDSS = 100A (Max) (VDS = 400V) D Enhancement Model: Vth = 2 to 4V (VDS = 10V, ID = 1mA) Applications: D DC−DC Converter D Relay Drive D Motor Drive G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . .
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