Click to expand full text
NTE2931 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3PML Type Package
Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.1443 Typ D Lower Leakage Current: 105 A (Max) @ VDS = 200V
D
G S
Absolute Maximum Ratings:
Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e50C15C).
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
. . .
NTE2931 Datasheet
