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NTE281 - Silicon Complementary Transistors

Description

The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications.

Features

  • D High Power Dissipation: PC = 100W D Collector.
  • Emitter Breakdown Voltage: V(BR)CEO = 140V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . 140V Collector.
  • Base Voltage, VCBO.
  • . . . . 140V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number NTE281
Manufacturer NTE Electronics (defunct)
File Size 21.50 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE281 Datasheet

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Part Number Description
NTE28 Germanium PNP Transistor
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Full PDF Text Transcription

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NTE280 (NPN) & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: D High Power Dissipation: PC = 100W D Collector–Emitter Breakdown Voltage: V(BR)CEO = 140V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . .
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