Datasheet4U Logo Datasheet4U.com

NTE275 - Silicon Complementary Transistors

Download the NTE275 datasheet PDF. This datasheet also covers the NTE274 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low

frequency switching and hammer driver applications.

Features

  • D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE274_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE275
Manufacturer NTE Electronics (defunct)
File Size 25.78 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE275 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE276 Silicon Controlled Rectifier NTE Electronics
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE27 Germanium PNP Transistor High Current / High Gain Amp
NTE270 Silicon Complementary Transistors Darlington Power Amp / Switch
NTE2708 Integrated Circuit NMOS / 8K UV EPROM / 450ns
NTE271 Silicon Complementary Transistors
NTE2716 Integrated Circuit NMOS / 16K UV Erasable PROM

Full PDF Text Transcription

Click to expand full text
NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . .
Published: |