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NTE274 - Silicon Complementary Transistors Darlington Power Amplifier / Switch

Description

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low

frequency switching and hammer driver applications.

Features

  • D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.

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Datasheet preview – NTE274

Datasheet Details

Part number NTE274
Manufacturer NTE
File Size 25.78 KB
Description Silicon Complementary Transistors Darlington Power Amplifier / Switch
Datasheet download datasheet NTE274 Datasheet
Additional preview pages of the NTE274 datasheet.

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Full PDF Text Transcription

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NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . .
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