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NTE2681 - Silicon NPN Transistor

Features

  • D High Switching Speed D High Breakdown Voltage: VCBO = 1600V D High Reliability D Built.
  • in Damper Diode.

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Datasheet Details

Part number NTE2681
Manufacturer NTE Electronics (defunct)
File Size 61.54 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE2681 Datasheet

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Full PDF Text Transcription

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NTE2681 Silicon NPN Transistor High Speed Switch w/Internal Damper Diode TO3PMLH Type Package Features: D High Switching Speed D High Breakdown Voltage: VCBO = 1600V D High Reliability D Built−in Damper Diode Applications: D Horizontal Deflection Output for Ultrahigh−Definition CRT Displays Absolute Maximum Ratings: Collector−Base Voltage, VCBO .(T. A. .=. +25°C ...... unless ....... otherwise ......... specified) ......... . . . . . . . . . . . . . . . . . 1600V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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