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NTE262 - Silicon Complementary Transistors Darlington Power Amplifier

This page provides the datasheet information for the NTE262, a member of the NTE261 Silicon Complementary Transistors Darlington Power Amplifier family.

Description

The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low

speed switching applications.

Features

  • D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base.

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Datasheet preview – NTE262

Datasheet Details

Part number NTE262
Manufacturer NTE
File Size 24.86 KB
Description Silicon Complementary Transistors Darlington Power Amplifier
Datasheet download datasheet NTE262 Datasheet
Additional preview pages of the NTE262 datasheet.

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Full PDF Text Transcription

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NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . .
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