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NTE2574 - Silicon Complementary Transistors

Features

  • D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics: NTE2574: Cre = 2.7pF NTE2575: Cre = 4.0pF D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • . . . . 120V Collector.
  • Emitter Voltage.

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Datasheet Details

Part number NTE2574
Manufacturer NTE Electronics (defunct)
File Size 22.06 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE2574 Datasheet

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Full PDF Text Transcription

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NTE2574 (NPN) & NTE2575 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics: NTE2574: Cre = 2.7pF NTE2575: Cre = 4.0pF D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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