Datasheet4U Logo Datasheet4U.com

NTE252 - Silicon Complementary Transistors

Download the NTE252 datasheet PDF. This datasheet also covers the NTE251 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low

frequency switching applications.

Features

  • D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE251_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE252
Manufacturer NTE Electronics (defunct)
File Size 26.19 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE252 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE214 (NTE74xx) Transistor Logic NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE2520 Silicon Complementary Transistors
NTE2521 Silicon NPN Transistor
NTE2522 Silicon Complementary Transistors
NTE2523 Silicon Complementary Transistors
NTE2524 Silicon Complementary Transistors

Full PDF Text Transcription

Click to expand full text
NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |