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NTE251 - Silicon Complementary Transistors

Description

The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low

frequency switching applications.

Features

  • D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number NTE251
Manufacturer NTE Electronics (defunct)
File Size 26.19 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE251 Datasheet

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Full PDF Text Transcription

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NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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