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NTE2504 - Silicon NPN Transistor

Features

  • D Large Current Capacity (IC = 2A) D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) < 0.5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • 30V Collector.
  • Emitter Voltage, VCEO.

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Datasheet Details

Part number NTE2504
Manufacturer NTE Electronics (defunct)
File Size 20.16 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE2504 Datasheet

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Full PDF Text Transcription

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NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity (IC = 2A) D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . .
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