Datasheet4U Logo Datasheet4U.com

NTE2390 - N-Channel Enhancement Mode MOSFET

Description

The NTE2390 is an N

Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features

  • D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged.
  • SOA is Power Dissipation Limited D Source.
  • to.
  • Drain Diode Characterized for Use With Inductive Loads G D Absolute Maximum Ratings: S Drain.
  • Source Voltage, VDSS.
  • . . 60V Drain.
  • Gate Voltage (RGS = 1M+ ), VDGR.

📥 Download Datasheet

Datasheet preview – NTE2390

Datasheet Details

Part number NTE2390
Manufacturer NTE
File Size 58.62 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NTE2390 Datasheet
Additional preview pages of the NTE2390 datasheet.

📁 Similar Datasheet

  • NTE2393 - N-Channel MOSFET (INCHANGE)
  • NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
  • NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
  • NTE2662 - Silicon NPN Transistor High Frequency (NTE Electronics)
  • NTE2665 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
  • NTE2668 - Silicon NPN Transistor High Current Switching (NTE Electronics)
Other Datasheets by NTE

Full PDF Text Transcription

Click to expand full text
NTE2390 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged − SOA is Power Dissipation Limited D Source−to−Drain Diode Characterized for Use With Inductive Loads G D Absolute Maximum Ratings: S Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 1M+ ), VDGR . . . . . . . . . . . . . . . .
Published: |