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NTE2361 - Silicon Complementary Transistors

Description

The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general

purpose amplifier and high speed switching applications.

The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

Features

  • D Very Small.
  • Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • 60V Collector.
  • Emitter Voltage, VCEO.
  • . . . . 50V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number NTE2361
Manufacturer NTE Electronics (defunct)
File Size 22.68 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE2361 Datasheet

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Full PDF Text Transcription

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NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: D Very Small–Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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