Datasheet4U Logo Datasheet4U.com

NTE2346 - Silicon Complementary Transistors

Download the NTE2346 datasheet PDF. This datasheet also covers the NTE2345 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT

82 type package designed for use in audio output stages and general amplifier and switching applications..

Features

  • D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCBO.
  • . . . . 120V Emitter.
  • Base Voltage, VEBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2345_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2346
Manufacturer NTE Electronics (defunct)
File Size 25.61 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE2346 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE2393 N-Channel MOSFET INCHANGE
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE234 Silicon PNP Transistor
NTE2340 Silicon NPN Transistor
NTE2341 Silicon Complementary Transistors
NTE2342 Silicon Complementary Transistors
NTE2343 Silicon Complementary Transistors

Full PDF Text Transcription

Click to expand full text
NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . .
Published: |