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NTE219 - Silicon Power Transistor

Download the NTE219 datasheet PDF. This datasheet also covers the NTE130 variant, as both devices belong to the same silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

Features

  • D DC Current Gain: hFE = 20.
  • 70 @ IC = 4A D Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Emitter Voltage, VCER.
  • . . . . 70V Collector.
  • Base Vo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE130_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE219
Manufacturer NTE Electronics (defunct)
File Size 24.88 KB
Description Silicon Power Transistor
Datasheet download datasheet NTE219 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE21 Silicon Complementary Transistors
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Full PDF Text Transcription

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NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 – 70 @ IC = 4A D Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . .
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