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NTE218 - Silicon PNP Transistor

Description

The NTE218 is ideal for use as a driver, switch and medium

power amplifier applications.

Features

  • Features: D Low Saturation Voltage.
  • 0.6VCE(sat) @ IC = 1A D High Gain Characteristics.
  • hFE @ IC = 250mA: 30.
  • 100 D Excellent Safe Area Limits Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.
  • . . 80V Emitter.
  • Base.

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Datasheet Details

Part number NTE218
Manufacturer NTE Electronics (defunct)
File Size 23.59 KB
Description Silicon PNP Transistor
Datasheet download datasheet NTE218 Datasheet

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Full PDF Text Transcription

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NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: D Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A D High Gain Characteristics – hFE @ IC = 250mA: 30–100 D Excellent Safe Area Limits Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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