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NTE188 (NPN) & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver
Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a T O202N type package designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . .