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2N3055 - Silicon NPN Power Transistor

General Description

The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications.

Key Features

  • D DC Current Gain: hFE = 20.
  • 70 @ IC = 4A D Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Emitter Voltage, VCER.
  • . . . . 70V Collector.
  • Base.

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Datasheet Details

Part number 2N3055
Manufacturer NTE Electronics (defunct)
File Size 61.04 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N3055 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3055 Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package Description: The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .