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NTE99 - Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode

Description

The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high

speed, power switching in inductive circuits where fall time is critical.

operated switchmode applications.

Features

  • D Fast Turn.
  • Off Times: 1.0µs (max) Inductive Crossover Time.
  • 20 Amps 2.5µs (max) Inductive Storage Time.
  • 20 Amps D Operating Temperature Range:.
  • 65° to +200°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 400V Collector.
  • Emitter Voltage, VCEV.
  • . . . 600.

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Datasheet Details

Part number NTE99
Manufacturer NTE Electronics (defunct)
File Size 27.66 KB
Description Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
Datasheet download datasheet NTE99 Datasheet

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Full PDF Text Transcription

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NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line–operated switchmode applications. Applications: D Switching Regulators D Motor Controls D Inverters D Solenoid and Relay Drivers Features: D Fast Turn–Off Times: 1.0µs (max) Inductive Crossover Time – 20 Amps 2.5µs (max) Inductive Storage Time – 20 Amps D Operating Temperature Range: –65° to +200°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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