NTE6810 - Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)

Description

The NTE6810 is a byte orgainzed memory in a 24 Lead DIP type package designed for use in bus

organized systems.

channel silicon

gate technology.

Features

D Organized as 128 Bytes of 8.
Bits D Static Operation D Bidirectional Three.
State Data Input/Output D Six Chip Select Inputs (Four Active Low, Two Active High) D Single 5V Power Supply D TTL Compatible D Maximum Access Time: 450ns Absolute Maximum Ratings: Supply Voltage, VCC.
.
0.3 to +7V Input Voltage, Vin.

NTE Electronics

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Datasheet Details

Part number	NTE6810
Manufacturer	NTE Electronics
File Size	42.37 KB
Description	Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)
Datasheet	NTE6810 Datasheet
Additional preview pages of the NTE6810 datasheet.

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Full PDF Text Transcription

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NTE6810 Integrated Circuit 128 x 8–Bit Static Random Access Memory (SRAM) Description: The NTE6810 is a byte–orgainzed memory in a 24–Lead DIP type package designed for use in bus– organized systems. It is fabricated with N–channel silicon–gate technology. For ease of use, this device operates from a single power supply, has compatibility with TTL and DTL, and needs no clocks or refreshing because of static operation. The memory is compatible with the 6800 Microcomputer Family, providing random storage in byte increments. Memory expansion is provided through multiple Chip Select inputs.

Published: May 12, 2005 |