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NTE6664 Integrated Circuit 64K–Bit Dynamic RAM
Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability. By multiplying row– and column– address inputs, the NTE6664 requires only eight address lines and permits packaging in a standard 16–Lead DIP package. Complete address decoding is done on chip with address latches incorporated. Data out is controlled by CAS allowing for greater system flexibility. All inputs and outputs, including clocks, are fully TTL compatible. The NTE6664 incorporates a one– transistor cell design and dynamic storage techniques.
NTE6664 Datasheet
