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NTE6093 Silicon Rectifier Dual, Schottky Barrier
Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: D Low Forward Voltage D Guard–Ring for Stress Protection D Low Power Loss & High Efficiency D Guarantee Reverse Avalanche D +125°C Operating Junction Temperature D High Surge Capacity D Low Storied Charge majority Carrier Conduction D Low Switching Noise Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V DC Blocking Voltage, VR . . . . . . . .
NTE6093 Datasheet
