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NTE593 Silicon Diode, High Speed Switch
Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current (TA ≤ +25°C, Note 2), IF . . .