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NTE584 Silicon Schottky Diode
Description: The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35mA Surge Non–Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . .