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NSM2016 Datasheet Hall-Effect-Based Current Sensor IC

Manufacturer: NOVOSENSE

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Datasheet Details

Part number NSM2016
Manufacturer NOVOSENSE
File Size 3.55 MB
Description Hall-Effect-Based Current Sensor IC
Datasheet download datasheet NSM2016 Datasheet

Overview

NSM2016 Hall-Effect-Based Current Sensor IC with CommonMode Field Rejection and Overcurrent protection Datasheet (CN) 1.0 Product Overview NSM2016 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip.

NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar.

A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields.

Key Features

  • High bandwidth and fast response time.
  • 380kHz bandwidth.
  • 1.5us response time.
  • High-precision current measurement.
  • Differential hall sets can immune stray field.
  • High isolation level that meets UL standards.
  • Withstand isolation voltage (VISO): 3000Vrms.
  • Maximum surge isolation withstand voltage (VIOSM): 6kV.
  • CMTI > 100V/ns.
  • CTI（I）.
  • Creepage distance/Clearance distance: 4mm.

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