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FDP61N20 200V N-Channel MOSFET
September 2005
UniFET
FDP61N20
200V N-Channel MOSFET Features
• 61A, 200V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
2406KL Datasheet
