GT10PI120B3H
Features
： z Short Circuit Rated>10μs z Field Stop Trench Gate IGBT z Low Saturation Voltage z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, pliant with Ro HS Requirement
Applications： z Industrial Inverters z Servo Applications
IGBT, Inverter Maximum Rated Values (TC=25℃unless otherwise specified)
VCES VGES
ICM t SC PD
Collector-Emitter Blocking Voltage Gate-Emitter Voltage
Continuous Collector Current
Repetitive Peak Collector Current Short Circuit Withstand Time Maximum Power Dissipation per IGBT
TC = 100℃ TC = 25℃ TJ = 175℃
TC = 25℃ TJmax=175℃
±20
>10
μs
.njsme. 2019 NJSME All rights reserved
Page 1 Rev. A 07/08/2019
Electrical Characteristics of IGBT (TC=25℃unless otherwise specified)
Static Characteristics
Symbol Description
VGE(th)
Gate-Emitter Threshold Voltage
Conditions IC = 1 m A, VCE = VGE
Min Typ Max Unit
VCE(sat) Collector-Emitter Saturation Voltage
ICES
Collect...
