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PZD502CYB - N-Channel MOSFET

Download the PZD502CYB datasheet PDF. This datasheet also covers the PZD502CYB-NIKO variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PZD502CYB-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

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NIKO-SEM N-Channel Logic Level Enhancement PZD502CYB Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 450mΩ ID 0.7A ESD Protected Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS 20 ±8 0.7 0.6 2 0.4 0.2 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RθJA 280 °C/W 1Pulse width limited by maximum junction temperature.
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