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PP4B10BS - N-Channel Enhancement Mode Field Effect Transistor

Download the PP4B10BS datasheet PDF. This datasheet also covers the PP4B10BS-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PP4B10BS-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PP4B10BS
Manufacturer NIKO-SEM
File Size 190.34 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PP4B10BS Datasheet

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Full PDF Text Transcription

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor PP4B10BS TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 4.2mΩ ID 134A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg 123 1.GATE 2.DRAIN 3.SOURCE LIMITS ±20 134 94 370 20 200 166 83 -55 to 175 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
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