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P5806NPG - N- & P-Channel Field Effect Transistor

This page provides the datasheet information for the P5806NPG, a member of the P5806NPG-NIKO N- & P-Channel Field Effect Transistor family.

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Datasheet Details

Part number P5806NPG
Manufacturer NIKO-SEM
File Size 732.09 KB
Description N- & P-Channel Field Effect Transistor
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NIKO-SEM N- & P-Channel Enhancement Mode P5806NPG Field Effect Transistor DIP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 60 58mΩ P-Channel -60 90mΩ ID 4.5A -3.5A D1 D1 D2 D2 #1S1 G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM PD Tj, Tstg N-Channel P-Channel UNITS 60 -60 V ±20 ±20 V 4.5 -3.5 4 -3 A 20 -20 2 W 1.
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