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Full PDF Text Transcription for UPD72103A (Reference)
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UPD72103A. For precise diagrams, and layout, please refer to the original PDF.
tion) Date Published March 1997 N CP(N) Printed in Japan www.DataSheet4U.com NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.
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