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UPD4664312-X - 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

General Description

The µPD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile Specified RAM featuring Low Power Static RAM compatible function and pin configuration.

The µPD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell.

Key Features

  • 4,194,304 words by 16 bits organization.
  • Fast access time: 65, 75 ns (MAX. ).
  • Fast page access time: 18, 25 ns (MAX. ).
  • Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15).
  • Low voltage operation: 2.7 to 3.1 V (-B65X) 2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X).
  • Operating ambient temperature: TA =.
  • 25 to +85 °C.
  • Output Enable input for easy.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4664312-X 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile Specified RAM featuring Low Power Static RAM compatible function and pin configuration. The µPD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4664312-X is packed in 93-pin TAPE FBGA. Features • 4,194,304 words by 16 bits organization • Fast access time: 65, 75 ns (MAX.) • Fast page access time: 18, 25 ns (MAX.) • Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15) • Low voltage operation: 2.7 to 3.1 V (-B65X) 2.7 to 3.1 V (Chip), 1.65 to 2.